| 摘要 |
A high voltage silicon carbide MESFET includes an electric field equalizing region in a monocrystalline silicon carbide substrate at a face thereof, which extends between the drain and gate of the MESFET and between the source and gate of the MESFET. The region equalizes the electric field between the drain and gate and between the source and gate to thereby increase the breakdown voltage of the silicon carbide MESFET. The first and second electric field equalizing regions are preferably amorphous silicon carbide regions in the monocrystalline silicon carbide substrate. The amorphous regions are preferably formed by performing a shallow ion implantation of electrically inactive ions such as argon, using the source and drain electrodes and the metal gate as a mask, at a sufficient dose and energy to amorphize the substrate face. A third amorphous silicon carbide region may be formed at the face, adjacent and surrounding the MESFET to provide edge termination and isolation of the MESFET. The third amorphous silicon carbide region may be formed during the same shallow implant described above or may be formed in a separate deep implant. The lateral silicon carbide MESFET may be formed in an epitaxial region of second conductivity type on a substrate of first conductivity type, or in an implanted region of second conductivity type in a substrate of first conductivity type.
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