发明名称 GAS TREATING DEVICE
摘要 PURPOSE:To provide a gas treating device which is capable of stably carrying out gas treating such as a CVD or the like to a semiconductor wafer, stably feeding an electric power to a heating resistor and protecting the heating resistor and a terminal against corrosion caused by treating gas. CONSTITUTION:A cylindrical quartz case 3 whose lower end is open is placed in a treating chamber 2, the lower end of a flange 34 is airtightly joined to the base wall of the treating chamber 2, whereby the inner space of the case 3 is hermetically isolated from the treating chamber 2. A heating resistor 4 is provided inside the case 3 confronting the surface of a wafer mount, feeders 5A and 5B and a thermocouple 6 are led into the case 3 from the outside through a lid plate 24 which faces toward the lower end of the case 3. An inert gas feed pipe 43 and an exhaust pipe are connected to the lid plate 24, the case 3 is charged with inert gas through these pipes to protect the heating resistor 4 or the like against oxidation.
申请公布号 JPH0778766(A) 申请公布日期 1995.03.20
申请号 JP19930179845 申请日期 1993.06.24
申请人 TOKYO ELECTRON LTD 发明人 MURAKAMI MASASHI
分类号 H01L21/205;C23C16/44;C23C16/458;C23C16/46;H01L21/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 主分类号 H01L21/205
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