| 摘要 |
<p>PURPOSE:To prevent the occurrence of a program disturbing phenomenon of a virtually grounded type semiconductor storage device and to enable the high integration. CONSTITUTION:Main bit lines MBL1, MBL2,... are provided in common in respective array segments SEGi-1, SEGi, SEGi+1, and sub bit lines SBLi1, SBLi2,... are provided for each array segment. In respective array segments, floating gate type nonvolatile memory cells Qm1, Qm2,... are connected between two adjacent sub bit lines, and are controlled by one of word lines WLi1, WLi2,.... Selection transistors Qs1, Qs2,... are controlled by a selection signal SELi0, and an (n)-th main bit line is connected to (2n-1)-th, 2n-th sub bit lines (n=1, 2,...). Further, the selection transistors Qs1', Qs2' are controlled by the selection signal SELi1, and an (n)-th main bit line is connected to 2n-th, (2n+1)-th sub bit lines.</p> |
