| 摘要 |
PURPOSE:To obtain thin and high quality oxide films and suppress surface defects and, further, obtain excellent impurity concentration profiles when a number of semiconductor wafers are simultaneously subjected to a heat treatment. CONSTITUTION:A number of wafers W are mount on the ring-shaped mount table of a wafer boat 4. The inside temperature of a reaction tube 1 is preset, for instance, at 400 deg.C and the wafer boat 4 is brought into the reaction tube 1 and then the inside temperature of the reaction tube 1 is elevated to a treatment temperature, for instance, with a speed of 100 deg./min. As the loading of the wafers are performed under a low temperature and then the inside temperature of the reaction tube 1 is elevated with a high speed, in an oxidation treatment, the growth of a low quality oxide film is suppressed and, in a diffusion treatment, as a difference between the thermal history to which the wafers W in the upper side of the wafer boat and the thermal history to which the wafers W in the lower side of the wafer boat is small, excellent impurity concentration profiles can be obtained on the respective wafers. |
