| 摘要 |
The method includes the steps of growing epitaxial layer (2) of multilayer structure on a semiconductor substrate (1), depositing a thin fluoride film (3) on the layer (2), irradiating electron beams on the predetermined portion of the film (3) to convert the portion into a metal film (4), depositing a passivation film (5) thereon, and diffusing metallic impurities from the film (4), i.e., a diffusion source into the substrate (1), thereby the multilayered structure in a diffusion area being mixed mutually, and the multilayered structure in a protection area by the film (3) being maintained in the multilayer state.
|
