| 摘要 |
The method includes growing a GaAs epitaxial layer, i.e., a buffer layer to the thickness of more than 3 micron on a silicon layer, interrupting the GaAs epitaxial layer growth to grow a delta doping layer thereon at 700-750 degree C. by a metalorganic chemical vapor deposition, and growing a GaAs epitaxial layer, i.e., a covering layer thereon at 700-790 degree C., thereby preventing a dopant diffusion from accelerating.
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