| 摘要 |
The proposed method of producing layers of silicon carbide involves cleaning of the initial components, introduction of a steam/gas mixture of methyl trichlorosilane and hydrogen into a reactor, and decomposition thereof on a heated substrate to form silicon carbide and products of decomposition. The steam/gas mixture is introduced to the substrate, which is heated to 1200-1250 DEG C, at a rate of 3-4 g/cm<2>/hr, the molar ratio of methyl trichlorosilane to hydrogen being 1:(1-3). The products of decomposition are removed from the reactor and separated by condensation into gas and liquid phases, the liquid phase flowing away under gravity to undergo rectification, while the methyl trichlorosilane is removed and returned to the reactor. The liquid phase is condensed at a temperature of -70 to -75 DEG C or 0 to -120 DEG C and the methyl trichlorosilane is then removed from the liquid phase, while the organochlorosilanes are combined after rectification with the methyl trichlorosilane and fed back into the reactor. The gas phase obtained after condensation, which contains hydrogen chloride, methane and hydrogen, is cooled to between -185 and -196 DEG C; the hydrogen chloride and methane is removed in a solid precipitate and the hydrogen is compressed and fed back into the reactor. A product obtained in the manner described above comprises consecutive series of layers of elastic carbonaceous material or silicon carbide as a shell, the first silicon carbide layer having a thickness of 100-500 mu m and the second layer having a desired thickness on the shell. |
