| 摘要 |
PURPOSE:To enable to stably obtain the desired resist mask having small differential measurements, which becomes larger than the exposure region of an etching region, and also having no exforiation on the surface skin part. CONSTITUTION:The developing of a resist film 2 consisting of positive resist is performed by combining the developing process using an ammonia-hydroxide developing solution and the developing process using a silicon developing solution. To be more precise, an ammonia-hydroxide developing solution and a silicon developing solution are used approximately two minutes at a stabilized region temperature in order to dissolve the easily-melting part 4 of a resist film 1 of approximately 1.2 mum in thickness. A developing -process is performed for approximately 1.5 minutes at the temperature of approximately 30 deg.C which is within the stabilized region temperature using an ammonia-hydroxide developing solution, the above is washed by water, and another developing process is performed for approximately 0.5 minute using a silicon developing solution. |
