| 摘要 |
PURPOSE:To obtain a chip device having high insulation resistance and mechanical strength by adding a specified quantity of zirconium oxide to a magnetic or dielectric material. CONSTITUTION:In a chip device comprising a magnetic material, an inner electrode, and a terminal electrode, the magnetic material contains 0.01-1.2wt.% of zirconium oxide. In a chip device comprising a dielectric material, an inner electrode, and a terminal electrode, the dielectic material comprises 0.01-1.2wt.% of zirconium oxide. Since the insulation resistance is high and abnormal deposition of plating scarcely take place in the terminal electrode, the external view and reliability are not damaged by delamination at the end of electrode. Furthermore since the mechanical strength is sufficiently high, the chip device is not damaged at the time of handling as a unit device or at the time of surface mounting and protected against mechanical stress or thermal stress after soldering. |
