| 摘要 |
<p>A method for forming channel stop implants in semiconductor integrated circuits is disclosed. Patterned polysilicon (e.g., 17, 13) and silicon nitride (e.g., 19, 15) layers are formed upon a silicon substrate (e.g., 11). Silicon dioxide spacers (e.g., 23, 25) are next formed adjacent the patterned polysilicon (e.g., 17, 13) and silicon nitride layers (e.g., 19, 15). Next, a channel stop implantation is performed (e.g., 31). The spacers (e.g., 17, 13) restrict the size of the chan stop implantation. The spacers are subsequently removed and a thermal heat treatment is performed to create the field oxides (e.g., 63). Because the width of the chan stop implants was initially restricted, subsequent lateral diffusion is not harmful. <IMAGE> <IMAGE></p> |
