发明名称 PATTERN DEFECT PROCESSING METHOD FOR GLASS MASK
摘要 PURPOSE:To securely remove defectives securely by dripping or applying a light shielding material on only a circuit pattern which is defective or has dust stuck, and then performing photolithography and cleaning a glass mask. CONSTITUTION:The light shield material 22 is dripped on only the defective or dust-stuck circuit pattern 21 and caked to thickness with which disables electric operation in probe inspection. Then, the glass mask whose pattern defect rate is lower than a specific standard value is used for the photolithographic process and cleaned to remove the light shielding material 22 from the glass mask. The circuit pattern where the light shielding material is dripped indicates that the product can be not be forwarded and is selected afterward with a probe, so that the abnormal generation of heat or the breaking of a wire is prevented during use.
申请公布号 JPS6279464(A) 申请公布日期 1987.04.11
申请号 JP19850219258 申请日期 1985.10.03
申请人 OKI ELECTRIC IND CO LTD 发明人 MATSUMOTO MUNEYUKI;ABE KENJI
分类号 H01L21/66;G03F1/00;G03F1/72;H01L21/027 主分类号 H01L21/66
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