| 摘要 |
PURPOSE:To realize the introduction of a contact selective growth technique which is suited more to an actual requirement and to avoid a problem that a mark used for an alignment operation by using a contact-hole pattern after a contact selective growth operation is hard to read out in the manufacture, of a semiconductor device, which is provided with a process in which at least a part of a contact hole is buried by a selective growth method. CONSTITUTION:Contact holes are opened in an insulating film layer 109 on a semiconductor substrate 101, and titanium silicide films 112, 113 are formed respectively on an Si film 103 on the bottom face of the contact holes and WSi2 films 105, 107, 108 As a result, an SiO2 film 114 is formed on an TiSi2 film-on the Si film, and a TiOx film 115 is formed on the TiSix film [where (x)<21 on the WSi2 films. By utilizing the difference in a film thickness between the SiO2 film and the TiOx film, a treatment is execute-1 under a condition that only the SiO2 film is removed, and a W film is selectively grown by CVD. Then since the TiO film is left on the WSi2 films a W film 116 is grown selectively only on the Si film. |
