| 摘要 |
PURPOSE:To obtain a resist material having high transparency for far UV rays of <220nm wavelength and high photoreaction efficiency and to enable formation of a pattern by using this resist material by using a specified compsn. containing an alkylsulfonium salt compd. and pattering with irradiation of light. CONSTITUTION:This photosensitive resin compsn. contains an alkylsulfonnum salt expressed by formula. In formula, R<1> and R<2> are straight-chain, branched or cyclic alkyl groups of 1-8 carbon number, R<3> is a straight-chain, branched, or cyclic alkyl group of 1-8 carbon number, 2-oxocyclic alkyl group of 5-7 carbon number, or 2-oxo straight-chain or branched alkyl group of 3-8 carbon number, and Y<-> is a counter ion. By using this photosensitive resin compsn., a good square fine pattern can be formed in high sensitivity with good resolution by using an ArF excimer laser as the exposure light. |
