发明名称 Floating-gate cell with enhanced storage duration
摘要 The present invention relates to a floating-gate cell comprising a gate stacking (2-6), spacers (11) made of phosphorus-doped glass which are formed on the edges of the gate stacking, an insulating planarising layer (10) covering the whole of the structure, drain contact apertures (13) formed in the insulating planarising layer and not in the spacers. Preferably, the phosphorus-doped glass (PSG) contains 4 to 10 % by weight of phosphorus and the planarising layer is a layer of glass doped with boron and with phosphorus (BPSG). <IMAGE>
申请公布号 FR2708146(A1) 申请公布日期 1995.01.27
申请号 FR19930009140 申请日期 1993.07.19
申请人 SGS THOMSON MICROELECTRONICS SA 发明人 GUILLAUMOT BERNARD
分类号 H01L27/115;H01L29/788 主分类号 H01L27/115
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