发明名称 Magnetresistive Materialien.
摘要 A magnetoresistive material comprising a first magnetic thin-film layer mainly composed of Co with a thickness of 10 to 100 ANGSTROM , and a second magnetic thin-film layer mainly composed of NiXFeYCoZ with a thickness of 10 to 100 ANGSTROM , both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween, mainly composed of Cu with a thickness of 10 to 35 ANGSTROM , wherein X, Y and Z are 0.6 </= X </= 0.9, 0 </= Y </= 0.3, and 0.01 </= Z </= 0.3, respectively, and a second magnetic thin-film layer mainly composed of 50 atomic% or more of Ni, with a thickness of 10 to 100 ANGSTROM , both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween mainly composed of Cu with a thickness of 10 to 35 ANGSTROM , and non-magnetic metallic thin-film layers mainly composed of Cu with a thickness of 10 to 25 ANGSTROM , both of the two kinds of layers being laminated, and non-magnetic metallic thin-film layers mainly composed of Ni-Co containing 50 atomic% or more of Ni with a thickness of 10 to 100 ANGSTROM , and non-magnetic metallic thin-film layers mainly composed of Cu having a thickness of 10 to 25 ANGSTROM , both of the two kinds of layers being laminated.
申请公布号 DE69200169(T2) 申请公布日期 1995.01.26
申请号 DE1992600169T 申请日期 1992.03.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, OSAKA, JP 发明人 SATOMI, MITSUO, KATANO-SHI, JP;SAKAKIMA, HIROSHI, TSUZUKI-GUN, KYOTO-FU, JP
分类号 H01F10/32;H01L43/10;(IPC1-7):H01F10/12 主分类号 H01F10/32
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