发明名称 |
Magnetresistive Materialien. |
摘要 |
A magnetoresistive material comprising a first magnetic thin-film layer mainly composed of Co with a thickness of 10 to 100 ANGSTROM , and a second magnetic thin-film layer mainly composed of NiXFeYCoZ with a thickness of 10 to 100 ANGSTROM , both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween, mainly composed of Cu with a thickness of 10 to 35 ANGSTROM , wherein X, Y and Z are 0.6 </= X </= 0.9, 0 </= Y </= 0.3, and 0.01 </= Z </= 0.3, respectively, and a second magnetic thin-film layer mainly composed of 50 atomic% or more of Ni, with a thickness of 10 to 100 ANGSTROM , both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween mainly composed of Cu with a thickness of 10 to 35 ANGSTROM , and non-magnetic metallic thin-film layers mainly composed of Cu with a thickness of 10 to 25 ANGSTROM , both of the two kinds of layers being laminated, and non-magnetic metallic thin-film layers mainly composed of Ni-Co containing 50 atomic% or more of Ni with a thickness of 10 to 100 ANGSTROM , and non-magnetic metallic thin-film layers mainly composed of Cu having a thickness of 10 to 25 ANGSTROM , both of the two kinds of layers being laminated. |
申请公布号 |
DE69200169(T2) |
申请公布日期 |
1995.01.26 |
申请号 |
DE1992600169T |
申请日期 |
1992.03.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, OSAKA, JP |
发明人 |
SATOMI, MITSUO, KATANO-SHI, JP;SAKAKIMA, HIROSHI, TSUZUKI-GUN, KYOTO-FU, JP |
分类号 |
H01F10/32;H01L43/10;(IPC1-7):H01F10/12 |
主分类号 |
H01F10/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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