| 摘要 |
<p>PURPOSE:To provide a manufacturing method of a nonlinear optical element wherein the side part is made vertical and the working size is uniform without damaging the surface of a semiconductor layer of quantum well structure, and control the quantity of recombination center. CONSTITUTION:A substrate 1, a buffer layer 2, a semiconductor layer 3 of quantum well structure, a semiconductor cap layer 4, and a mask composed of an SiO2 film 5 are formed in order. Dry etching is continuously performed until the cap layer 4, the semiconductor layer 3 and the buffer layer 2, thereby forming a plurality of patterns wherein the thin line type side part is vertical. The buffer layer 2, the semiconductor layer 3 and the semiconductor cap layer 4 are etched by dipping them in chemical etching solution, in the state that the mask of the SiO2 film 5 is fixed.</p> |
