| 摘要 |
When the present invention is used for an EPROM, diffused wiring regions for bit lines on a semiconductor substrate, epitaxial layers on the semiconductor substrate and the diffused wiring region, drain diffused regions and source diffused regions on the epitaxial layer are provided, and internal contacts for electrically connecting the diffused wiring regions to the drain diffused regions and the source diffused regions are formed. Contact holes indispensably need a predetermined size so as to preferably conduct, but the wirings are buried in the epitaxial layer to reduce or eliminate the contact holes and to improve integration.
|
