| 摘要 |
<p>PURPOSE:To produce a phase-shift mask capable of easily forming a resist pattern of desired size without using an antistatic layer or without correcting a mutual proximity effect in the rim or auxiliary-pattern phase-shift mask. CONSTITUTION:A phase-shift mask consisting of a substrate 20, the light transmitting region 10 and light shielding region 12 formed on the substrate 20 and a region 14 for transmitting a light having a phase different from that of the light transmitted through the region 10 is produced as follows. Namely, (a) the light transmitting region 10 and the light shielding region 12 having a light shielding layer 22 consisting of a conductive material are formed on the substrate 20, and (b) the region 14 for transmitting a light having a phase different from that of the light transmitted through the region 10 is formed in the part of the region 12 adjacent or close to the region 10.</p> |
