| 摘要 |
PURPOSE:To display a wide range of hydrogen ion concentration in the form of voltage by combining a hydrogen ion electrode covering the gate insulation film surface of a field-effect transistor or a metal surface with tantalum nitride and a reference electrode. CONSTITUTION:Tantalum nitride is used as a hydrogen ion sensitive material and the gate insulation film surface of a field-effect transistor or a metal surface is covered with the tantalum nitride. Then, an ion selective field-effect transistor or hydrogen ion electrode using the tantalum nitride for the hydrogen ion sensitive substance are placed into the liquid solution to be measured containing hydrogen ion and the voltage between the electrode and a proper reference electrode is measured, thus obtaining the hydrogen ion concentration in the liquid solution to be measured. Also, silver-silver chloride electrode may be used as the reference electrode or it may be incorporated into the field-effect transistor along with the hydrogen ion electrode which is a measurement electrode. |
