| 摘要 |
<p>PURPOSE:To make an operating voltage range operatable in a lower power supply voltage in a semiconductor integrated circuit incorparated with an EEPROM using a high voltage for writing and erasing data. CONSTITUTION:A charge-up preformance of this circuit is improved by constituting Vpp switches 400a to 400d, 460a, 460f supplying high voltages to bit lines BL1, BL2 of a memory array, control gate lines CGL1, CGL2 and word lines WL1, WL2 with diode-connected transistors M60, M70 and capacitors C40, C50 to constitute plural of charge pumps. Thus, even though a power supply voltage is a lower power supply voltage Vcc, the transfers of high voltages become anailable and the circuit becomes anailable to operate even in a lower power supply voltage Vcc.</p> |
