| 摘要 |
<p>PURPOSE:To reduce residual suction and release a semiconductor substrate from substrate supporting electrodes in a short time so as to improve the through put of a device, and suppress the semiconductor substrate potential gradient due to electrostatic suction during the electric discharge so as to reduce damages on the semiconductor substrate. CONSTITUTION:Substrate supporting electrodes 3 provided in a vacuum container 1 to be highly evacuated is formed by burying a plurality of electrostatic suction electrodes 5A, 5B... in an insulator 4 and a direct current voltage of the same polarity or different polarities are applied on some or other electrostatic suction electrodes 5A, 5B... by switch-application. The electrostatic suction electrodes 5A, 5B... and the peripheral electrode are connected by an electrostatic capacity 7, and high-frequency power is applied to the peripheral electrode 6 and the electrostatic suction electrodes 5A, 5B....</p> |
