Method for passivation of multi-quantum well infrared photodetectors (qwips) to reduce dark current and to improve dark current uniformity

摘要

A method for passivating multi-quantum well wafers to reduce dark current and to improve dark current uniformity. The method comprises the steps of growing a wafer having a multi-quantum well structure, exposing at least a portion of the wafer to a hydrogen plasma and processing the wafer to form several discrete infrared photodetectors as well as detector arrays. The method finds application in GaAs/AlGaAs multi-quantum well detectors, in particular staring focal plane arrays (FPAs).