发明名称 |
SEMICONDUCTOR PRODUCTION EQUIPMENT |
摘要 |
<p>PURPOSE:To keep the uniformity of film thickness by preventing the film thickness on the periphery of an orientation flat from increasing significantly as compared with the central part of a wafer. CONSTITUTION:A wafer supporting board 4 supports a plurality of wafers 3 vertically to the axial direction of a vertical reaction furnace through a predetermined interval while shifting the orientation of the orientation flat 15 of each wafer 3 sequentially by a predetermined angle with respect to the axis of the vertical reaction furnace. This constitution decreases the difference of gas concentration per unit area in the vertical reaction furnace thus preventing the film thickness from increasing on the periphery of orientation flat.</p> |
申请公布号 |
JPH0714779(A) |
申请公布日期 |
1995.01.17 |
申请号 |
JP19930152549 |
申请日期 |
1993.06.24 |
申请人 |
NEC CORP |
发明人 |
KAIDO ATSUSHI |
分类号 |
C30B25/12;C30B25/14;H01L21/205;H01L21/673;H01L21/68;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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