| 摘要 |
The integrated circuit comprises a lateral insulated-gate bipolar transistor (LIGBT) having a cathode (35, 36, 37), an anode (34) and a gate (39, 40); and, a lateral double-diffusion metal-oxide-semiconductor (LDMOS) having a source (29, 30, 31), a drain (28) and a gate (33, 41). The LIGBT and the LDMOS are formed laterally on the same substrate (21) with the cathode (35, 36, 37) of the LIGBT being electrically connected to the source (29, 30, 31) of the LDMOS, and the anode (34) of the LIGBT being electrically connected to the drain (28) of the LDMOS. <IMAGE> |
