| 摘要 |
<p>PURPOSE:To provide a method of surely splitting a thinned semiconductor substrate into chips high in yield. CONSTITUTION:A single crystal silicon substrate 11 bonded to a transparent glass substrate 20 is thinned into a thin semiconductor substrate 11a, and the substrate 11a is split into chips. A process wherein grooves 18 as deep as the through-holes 17 are previously provided in a region where dicing lines for splitting the single crystal silicon substrate 11 are provided in a through-hole 17 forming process, thereafter a process wherein the rear side of the single crystal silicon substrate 11 to which the transparent glass substrate 20 is bonded is polished, and furthermore a process wherein dicing lines are provided to the transparent glass substrate 20 overlapping the grooves 18 provided to the thinned single crystal silicon substrate 11a are provided.</p> |
