BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

The method comprises; (A) depositing a first conductive film on first conductive substrate; (B) depositing a third insulating film on the second insulating film buried on a concave portion of the active area; (C) forming a thermal oxide film to above height of the third insulating film; (D) ion-implanting a second conductive impurity after removing the exposed second and third insulating films; (E) forming a first spacer on side-wall of the remained second insulating film; (F) etching the second insulating film exposed at bottom of the concave portion; (G) forming an outer base area; (H) forming an inner base area; (I) forming a second spacer on side-wall of contact hole and exposing the substrate to remove the oxide film remained at the bottom of the contact hole; and (J) forming an emitter area in the base area.