发明名称 |
Method of fabricating a nitride read-only-memory cell vertical structure |
摘要 |
A method for fabricating a nitride read only device is disclosed. A trench is formed in a semiconductor substrate. An ion implantation is performed to form a first source/drain region and a second source/drain region within the substrate in the upper corners of the trench, and to form a common source/drain region within the substrate at a bottom of the trench. Next, a trapping layer is formed over the substrate and the trench and a gate conducting layer is formed over the substrate and filling the trench.
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申请公布号 |
US6486028(B1) |
申请公布日期 |
2002.11.26 |
申请号 |
US20010990459 |
申请日期 |
2001.11.20 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG KENT KUOHUA;CHANG YAO-WEN |
分类号 |
H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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