| 发明名称 |
TRANSISTOR DEVICE |
| 摘要 |
<p>A transistor device (8) includes a channel (10) of p-type substantially transparent delafossite material. Source and drain contacts (12, 14) are interfaced to the channel (10). Gate dielectric (18) is between a gate contact (16) and the channel (10). <IMAGE></p> |
| 申请公布号 |
KR20050061323(A) |
申请公布日期 |
2005.06.22 |
| 申请号 |
KR20040105445 |
申请日期 |
2004.12.14 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
WAGER JOHN |
| 分类号 |
H01L21/28;G02F1/136;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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