| 发明名称 |
Dielectric thin film device and manufacturing method thereof. |
| 摘要 |
<p>A dielectric thin film device is constructed by a dielectric thin film (5) of a lead erbium zirconate titanate represented as (Pb1-yEry) (ZrxTi1-x)O3 in which 0 < x < 1 and 0 < y < 1. The film element (5) may include a thermally grown silicon dioxide film (2), a titanium film (3), a platinum lower electrode (4), a film (5) of lead erbium zirconate titanate represented as (Pb1-yEry) (ZrxTi1-x)O3 in which 0.45 </= x </= 0.75 and 0.05 </= y </= 0.1, and a platinum upper electrode (6) sequentially formed on an n-type silicon substrate (1).</p> |
| 申请公布号 |
EP0631319(A1) |
申请公布日期 |
1994.12.28 |
| 申请号 |
EP19940304548 |
申请日期 |
1994.06.22 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MASUDA, YOSHIYUKI;OGIMOTO, YASUSHI;OOTANI, NOBORU |
| 分类号 |
C01G23/00;C01G25/00;C23C18/12;G01N29/02;H01B3/00;H01G4/33;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;H01L37/02;H01L41/08;H01L41/113;(IPC1-7):H01L27/115 |
主分类号 |
C01G23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
