| 摘要 |
A memory cell of the SRAM type is provided that is capable of storing one datum in a non-volatile manner. The memory cell includes two inverters ( 20 and 21 ) configured as a flip-flop for storing one bit. Each inverter includes a transistor ( 24 or 26 ) of a first type and a transistor ( 25 or 27 ) of a second type. The concentration of carriers in the conduction channel of the transistor ( 24 ) of the first type of one of the inverters ( 20 ) is different from the concentration of carriers in the conduction channel of the transistor ( 26 ) of the first type of the other inverter ( 21 ) so that the inverters have different threshold voltages.
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