发明名称 |
Field-effect transistor substantially consisting of organic materials |
摘要 |
An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.
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申请公布号 |
US7402834(B2) |
申请公布日期 |
2008.07.22 |
申请号 |
US20020163104 |
申请日期 |
2002.06.05 |
申请人 |
POLYMER VISION LIMITED |
发明人 |
MUTSAERS CORNELIUS M. J.;DE LEEUW DAGOBERT M.;DRURY CHRISTOPHER J. |
分类号 |
H01L35/24;H01L51/05;H01L29/786;H01L51/00;H01L51/10;H01L51/30;H01L51/40 |
主分类号 |
H01L35/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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