FAST FLASH EPROM PROGRAMMING AND PRE-PROGRAMMING CIRCUIT DESIGN
摘要
A circuit (10) for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array (11) of floating gate storage transistors includes a controllable voltage source (18) that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant.
申请公布号
WO9428554(A1)
申请公布日期
1994.12.08
申请号
WO1993US05117
申请日期
1993.05.28
申请人
NKK CORPORATION;MACRONIX INTERNATIONAL CO., LTD.;YIU, TOM, DANG-HSING;WAN, RAY, L.;HSIAO, LING-WEN;LIN, TIEN-LER;SHONE, FUCHIA
发明人
YIU, TOM, DANG-HSING;WAN, RAY, L.;HSIAO, LING-WEN;LIN, TIEN-LER;SHONE, FUCHIA