RESIST COMPOSITION AND PATTERNING PROCESS

摘要

A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R 1 and R 2 are C 1 -C 3 alkyl, R 4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R 101 , R 102 and R 103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.