| 摘要 |
A lateral transistor structure, comprising: a first semiconductor layer being of a semiconductor material of a first conductivity type; a second semiconductor layer disposed on said first semiconductor layer, said second semiconductor layer having an upper surface; a field oxide layer disposed on said upper surface of said second semiconductor layer; a field implant region disposed underneath said field oxide layer, said field implant region being of a semiconductor material of said first conductivity type, said field implant region being lightly doped; a drain region extending into said second semiconductor layer from said upper surface of said second semiconductor layer, said drain region contacting said field implant region, said drain region being of a semiconductor material of said first conductivity type; a source region extending into said second semiconductor from said upper surface of said second semiconductor layer, said source region being laterally separated from said field implant region, said source region being of a semiconductor material of said first conductivity type; a body contact region extending into said second semiconductor later from said upper surface of said second semiconductor layer, said body contact region contacting said source region, said source region being disposed between said body contact region and said field implant region, said body contact region being of a semiconductor materual of a second conductovoty type opposite said first conductivity type; a body region extending from said body contact region and underneath said source region, said body region extending between said source region and said field implant region to form a channel region at said upper surface of the second semiconductor layer between said source region and said field implant region, said body regin being separated from said field implant region by a drift region portion of said second semiconductor layer between said source region and said field implant region, said body contact region being of a semiconductor material of said second semiconductor type; and a polysilicon gate layer, said polysilicon gate layer extending from a location over said source region, over said channel region, and over said drift region portion of said second semiconductor layer. <IMAGE> |
