| 摘要 |
<p>PURPOSE:To eliminate difference in size and height by forming the top part of a pointed emitter electrode for emitting electron, which is formed in a small hole, by etching the insulated layer around the side of the top part, and thereby forming a pointed emitter electrode without contraction controlling the diameter of the opening of the small hole. CONSTITUTION:An insulated layer 11 made of thermal oxidation SiO2 it formed on the conductive layer 10a of a conductive substrate 10. A gate electrode layer 12 such as Cr is formed on the layer 11. A small hole pattern is formed on a resin film 13 formed on the layer 12 and using this as a mask a small hole 14 is formed on the layers 12, 11 by a RIE method, and the surface of the base surface 10 is exposed. After the pattern 13 is removed, a metal of high melting point such as Mo, W is obliquely deposited, and a recessed shape emitter electrode 15 is thus formed. An inner gap part 11a is formed by isotropicaly etching the layer 11 around the side of the electrode 15, and a pointed front end part 16 is formed on the top part of the electrode 15, to provide an electron emission element.</p> |
