发明名称 Verbindungsstruktur und Herstellungsverfahren dafür
摘要 In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.
申请公布号 DE4234666(C2) 申请公布日期 1994.11.03
申请号 DE19924234666 申请日期 1992.10.14
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 MATSUURA, MEGUMI, ITAMI, HYOGO, JP;ISHIDA, TOMOHIRO, ITAMI, HYOGO, JP
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/532;H01L21/90 主分类号 H01L21/28
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