METHOD AND DEVICE OF SILICON FUSION BONDING

摘要

To increase the bonding strength and to remove the micro-gaps incured at bonding two sillicon wafers, the silicon fusion bonding method and equipment were developed. The equipment is composed of a wet oxidation equipment and a quartz spacer separating two wafers (w1,w2). The wafers are bonded by filling the micro-gaps located at junction interface with the wet oxide through the high temperature thermal annealing, which is followed by the stabilization process absorbing a great deal of oxidant. This method can be applied to growing a silicon on an insulation film and forming the micromachine structure for silicon sensors