| 摘要 |
defining active domain and field domain to form a gate electrode on the active domain with a gate oxide film, poly silicon and LTO (low temperature oxidation) film on a silicon substrate, depositing oxide film on it, etching it, and forming oxide film on a side wall of the gate electrode; depositing a nitrite film, etching and forming the side wall of a nitrate film; forming separating oxide film; removing the side wall of the nitrite film, forming n+ domain by depositing doped poly and low doped n- domain by using auto doping in case of shaping source and drain domain.
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