发明名称 METAL DEFUSING SYSTEM FOR OHMIC CONTACT
摘要 The metal diffusion system can obtain better conditioned (regularity, symmetricity) annealing than the conventional soldering and anneal simultaneously a multiple of semicondustors based on the area of a heater. The system comprises an annealing furnace (20); a vacuum pump (30) for evacuating the annealing furnace (20); a temp. control means (40) controlling the temp. of the furnace (20): a halogen lamp (9) generating heat: a heater (6) transferring the heat from the halogen lamp (9); a mica plate (10) making the semiconductor (2) separate from the heater (6).
申请公布号 KR940010152(B1) 申请公布日期 1994.10.22
申请号 KR19910007616 申请日期 1991.05.11
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 KIM, TAE - JIN;CHAE, TAE - IL;LEE, DU - HWAN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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