POLYSILICON OXIDATION LAYER REMOVING METHOD USING IMAGE REVERSAL

摘要

sequentially forming a nitride layer and polysilicon layer on a buffer oxide layer; forming a photoresist layer on the polysilicon layer; etching the polysilicon layer using the photoresist layer as a mask; oxidizing the polysilicon layer to form a polysilicon oxide layer; forming a photoresist layer between the polysilicon oxide layer; etching the polysilicon oxide layer; and oxidizing an isolation region. The method reduces narrow width effect in VLSI.