| 摘要 |
<p>PURPOSE:To provide a method for producing a semiconductor wafer in which mechanical transfer, e.g. surface suction, of a semiconductor wafer is allowed while preventing deterioration quality. CONSTITUTION:An oxide is deposited previously on a semiconductor wafer for which epitaxial growth is carried out so that the wafer can be transferred through surface suction. When the wafer is carried into a vapor phase epitaxial growth system, the oxide is removed within the system and an oxide is deposited again after vapor phase growth. This method allows transfer through surface suction while reducing the failure rate remarkably.</p> |
