发明名称 |
Static random access memory defect detection arrangement |
摘要 |
To detect open-circuit or "soft" defects in a SRAM e.g. a six transistor cell SRAM 1 embedded in a complex system on a chip, a sequence of test signal levels are applied to the memory cells thereof. Failed cells may be flagged to enable their replacement by spare cells. <IMAGE> |
申请公布号 |
GB2277161(A) |
申请公布日期 |
1994.10.19 |
申请号 |
GB19930007648 |
申请日期 |
1993.04.14 |
申请人 |
* PLESSEY SEMICONDUCTORS LIMITED |
发明人 |
RICHARD * ALBON;ALAN * MARTIN |
分类号 |
G11C29/44;G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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