发明名称 Static random access memory defect detection arrangement
摘要 To detect open-circuit or "soft" defects in a SRAM e.g. a six transistor cell SRAM 1 embedded in a complex system on a chip, a sequence of test signal levels are applied to the memory cells thereof. Failed cells may be flagged to enable their replacement by spare cells. <IMAGE>
申请公布号 GB2277161(A) 申请公布日期 1994.10.19
申请号 GB19930007648 申请日期 1993.04.14
申请人 * PLESSEY SEMICONDUCTORS LIMITED 发明人 RICHARD * ALBON;ALAN * MARTIN
分类号 G11C29/44;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/44
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