| 摘要 |
PURPOSE:To provide an optical semiconductor element having an optical film made a high durability and a specified % or lower of a reflectioity realize on its edge face through the element is manufactured using an Al2O3, an AIN, an Si3N4 and the like. CONSTITUTION:An optical semiconductor element 1 has an optical film coated on its edge face. The optical film consists of a combination of two layers of dielectric thin films 2 and 3, the first consisting of at least one kind of a material selected from between a material made of an aluminum nitride and a material made of a silicon nitride and the second thin film 3, which is formed on the thin film 2, consists of a film consisting of a material made of an aluminum oxide. Accordingly, the optical film consists of a film, which consists of at least one kind of a material selected from between a material made of an aluminum nitride and material made of a silicon oxide, and a film consisting of a material made of an aluminum oxide. The composition concentration on the side of the edge face of the composition concentration of the film consisting of the former material is high, the composition concentration is gradually decreased to the direction of the film thickness and the composition concentration on the side of the edge face of the composition concentration of the film consisting of the latter material made of the aluminum oxide is low and the composition concentration is gradually increased to the direction of the film thickness. |
