| 摘要 |
The isolation method includes the steps of sequentially forming first and second insulating layers on a semiconductor substrate, etching the second insulating layer to form a contact hole, removing a predetermined portion of the first insulating layer to expose a portion of the substrate, forming an oxide layer on the exposed portion of the substrate, forming a spacer on the inner wall of the contact hole, forming a first field oxide layer on the exposed portion of the substrate on which the spacer is not formed, ion-implanting impurities into the first field oxide layer, forming a second field oxide layer on the overall surface of the first field oxide layer, and removing the first and second insulating layer, and oxide layer, thereby preventing the impurities from penetrating into an active region.
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