发明名称 |
MANUFACTURING METHOD OF MASK ROM MOS-TR |
摘要 |
forming a polysilicon layer on a gate oxide layer formed on a substrate; forming a tungsten silicide layer on the polysilicon layer to form a gate electrode, the polysilicon layer of the gate electrode not being connected to a contact portion contact with a semiconductor layer in another region.
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申请公布号 |
KR940009629(B1) |
申请公布日期 |
1994.10.15 |
申请号 |
KR19910020420 |
申请日期 |
1991.11.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SE - JIN;YU, YONG - KYUN;CHOE, U - SHIK;KIM, HYONG - BOK |
分类号 |
H01L27/04;H01L27/112;(IPC1-7):H01L27/112 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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