Method for producing a capacitor for a large-scale integrated semiconductor storage component

摘要

In order to form capacitor storage electrodes having low component surface requirement and high capacitance, it is known to make these electrodes using an upper multi-cylinder electrode part, for example by applying a plurality of conductive layers and re-etching the same or by etching out a first cylinder from a conductive layer and self- aligning application of another cylindrical electrode part with the use of a separator. The novel method provides the generation of a first structure, the application of a layer of a first material, an anisotropic etching of the latter in order to generate a separator (46), the removal of the first structure, the application of a second conductive layer and an anisotropic etching of the latter in order to generate cylindrical storage electrode parts (52a, 52b). This procedure leads, with low complexity, to a capacitor having a comparatively high effective capacitor area with low component surface requirement and high reliability. Use, for example, in the production of dynamic DRAMs. <IMAGE>