Verfahren und Vorrichtung zur epitaktischen Züchtung.

摘要

A process of epitaxially growing a semiconductor Si, Ge or SiGe single crystal layer on a semiconductor (Si or Ge) single crystal substrate, comprising the steps of: allowing a raw material gas (e.g., Si2H6 , GeH4) for the layer and a fluoride gas (e.g., Si2F6 , GeF4 , BF) of at least one element selected from the group consisting of the semiconductor element of the layer and a dopant for the layer to simultaneously flow over the substrate; and applying an ultraviolet light to the substrate to decompose the gases by an ultraviolet light excitation reaction to deposit the layer on the surface of the substrate heated at a temperature of from 250 to 400 DEG C. Prior to the epitaxial growth of the semiconductor layer, the substrate is cleaned by allowing the fluoride gas to flow over the substrate having a temperature of from a room temperature to 500 DEG C, and by irradiating an ultraviolet light to the substrate to remove a natural oxide layer from the substrate surface.