| 发明名称 |
Contact manufacturing method of a multi-layered metal line structure |
| 摘要 |
The present invention relates to a manufacturing method of a contact of a multi-layered metal line of a highly integrated semiconductor device. The insulating layer between the metal lines is flattened and step coverage is improved by using a SOG layer or polyimide.
|
| 申请公布号 |
US5354713(A) |
申请公布日期 |
1994.10.11 |
| 申请号 |
US19920983875 |
申请日期 |
1992.12.01 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, JAE KAP;SON, GON |
| 分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
