Denuding a semiconductor substrate

摘要

A semiconductor substrate is denuded using a reducing gas mixture including carbon monoxide and carbon dioxide. Use of the reducing gas mixture allows very low oxygen partial pressure to be achieved in a furnace tube during the step of denuding. Oxygen partial pressure lower than 1E-9 atmosphere may be achieved by adjusting the relative ratio of carbon monoxide and carbon dioxide. Precipitates are grown after forming nucleating sites. Both CZ and FZ substrates may use the process, and the process can be used with silicon, germanium, or other semiconductor materials.