发明名称 METHOD FOR CORRECTING RESIDUAL DEFECT OF PHASE SHIFT MASK AND DEVICE THEREFOR
摘要 PURPOSE:To correct the residual defects of the phase shifters of a phase shift mask. CONSTITUTION:The device for correcting the mask by utilizing a sputtering effect of a focused ion beam is provided with plural secondary charge particle detectors 8 in order to correct the residual defects of the phase shifters of the phase shift mask. The three-dimensional shapes of the residual defects of the phase shifters are recognized by the outputs of the plural secondary charge particle detectors 8 and a map of ion irradiation quantities meeting the three-dimensional shapes of the defects is formed. Etching is executed in accordance with this map. Then, the surface of the mask after removal of the residual defects is smoothed and this mask is usable as the phase shift mask.
申请公布号 JPH06273918(A) 申请公布日期 1994.09.30
申请号 JP19930064427 申请日期 1993.03.23
申请人 SEIKO INSTR INC 发明人 YASAKA KOJIN;FUJII TOSHIAKI
分类号 B23K15/00;G03F1/30;G03F1/72;G03F1/74;H01L21/027;H01L21/302;H01L21/3065 主分类号 B23K15/00
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